Current-voltage characteristics of HPHT diamonds grown with variations in the composition of growth systems

Abstract

The current-voltage characteristics of HPHT diamonds grown in different growth systems were studied. Was established that there is a change in the shape of high-voltage I-V characteristics depending on the concentration of nitrogen in diamonds when the voltage applied to diamond samples grown in the Fe-Ni-C system in the range from 1.5 kV to 2.2 kV, which is associated with thermal-field it activation of donor centers and leads to an increase in the concentration of charge carriers in diamond plates at high applied voltages.