FORMATION OF DIAMOND SINGLE CRYSTALS WHEN CHANGING THE CONFIGURATION OF THE RESISTIVE HEATING SYSTEM IN HIGH-PRESSURE CUBIC-TYPE DEVICES

Abstract

The limiting values of axial and radial temperature gradients for growing diamond single crystals of different types and habit have been calculated and experimentally studied. Defined temperature limit values, exceeding which leads to the growth of defective crystals; it is shown that such values differ for each solution-melt system and must be selected separately. The necessary temperature conditions for the formation of cubic and cuboctahedral diamond single crystals have been established, as well as the prevention of the formation of binary crystals with the development of a defective region of the crystal associated with a change in the characteristics of carbon transfer from the source to the crystallization front.