POLYHEDRIC FORMS OF DIAMOND SINGLE CRYSTALS WITH DEVELOPED FACES OF THE TETRAGONTRIOCTAHEDRON

  • Tetiana Kovalenko V.M. Bakul Institute for Superhard Materials National Academy of Sciences of Ukraine
  • Peter Lytvyn V.E. Lashkaryov Institute of Semiconductor Physics of NAS of Ukraine
  • Valentyn Lisakovskyi V.M. Bakul Institute for Superhard Materials National Academy of Sciences of Ukraine
  • Sergii Ivakhnenko V.M. Bakul Institute for Superhard Materials National Academy of Sciences of Ukraine
  • Oleg Zanevskyy V.M. Bakul Institute for Superhard Materials National Academy of Sciences of Ukraine
  • Viktor Strelchuk V.E. Lashkaryov Institute of Semiconductor Physics of NAS of Ukraine
  • Andrii Nikolenko V.E. Lashkaryov Institute of Semiconductor Physics of NAS of Ukraine

Abstract

The growth process of diamond single crystals in the region of thermodynamic stability at high pressures of 6-6.5 GPa and temperatures of 1300-1500 oC (HPNT crystallization) by means of solution-melt crystallization on seeds was investigated. It was shown that when Fe-Co-Ti-Cu solvents are used, polyhedral forms with the development of {311} faces up to 50-57% of the total surface area of ​​the crystal are formed. The peculiarities of crystallization of diamonds of tetragontrioctahedral habit were studied using the high-pressure equipment TS40, structurally perfect crystals weighing 1.97 - 3.75 carats were obtained in growing cycles lasting 96 - 168 hours. Photogrammetry was used to study the features of crystal formation and surface growth accessories depending on the growing conditions, and the prospect of using the results to create diamond semiconductors when doping {311} growth sectors with electrically active impurities was considered.

Key words: diamond, single crystal, impurity, habitus, photogrammetry, crystal faces.

Published
2023-08-23
Issue
Vol 25 No 1 (2022): Tooling marerials science
Section
Instrumental, structural and functional materials based on diamond and cubic bor